Diode Arrays HFA280NJ60C product image

HFA280NJ60C

$44.40
  • Description:DIODE MOD GP 600V 222A TO-244AB
  • Series:HEXFRED®

SKU:cfd89e1e8214 Category: Brand:

  
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HFA280NJ60C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE MOD GP 600V 222A TO-244AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HFA280NJ60C

  • Description:DIODE MOD GP 600V 222A TO-244AB
  • Series:HEXFRED®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):222A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.6 V @ 140 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):140 ns
  • Current - Reverse Leakage @ Vr:40 µA @ 600 V
  • Operating Temperature - Junction:-
  • Mounting Type:Chassis Mount
  • Package / Case:TO-244AB
  • Supplier Device Package:TO-244AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for HFA280NJ60C

HFA280NJ60C

Diode Arrays Overview

The HFA280NJ60C is a HEXFRED ultrafast, soft recovery diode manufactured by Vishay General Semiconductor - Diodes Division. It features a base common cathode configuration in a TO-244AB package. Key electrical parameters include a maximum repetitive reverse voltage (VR) of 600 V and a continuous forward current (IF(AV)) of 280 A at 25°C case temperature. The device exhibits a typical reverse recovery time (trr) of 39 ns, a typical reverse recovery charge (Qrr) of 490 nC, and a peak rate of fall of recovery current (di(rec)M/dt) of 200 A/µs. Maximum power dissipation is rated at 625 W at 25°C.

Diode Arrays Feature Summary

  • Optimized for high-frequency power conditioning systems to reduce switching losses and electromagnetic interference.
  • Soft recovery characteristics eliminate the need for snubber circuits in most applications.
  • Extensive characterization of recovery parameters across varying current, temperature, and di/dt conditions simplifies loss calculations.

Diode Arrays Applications

  • Power converters
  • Motor drives
  • High-frequency full hybrid vehicle systems
  • Lighting systems

Diode Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision PD-2.445 rev. B matches the supplied unit. Ensure mounting torque specifications are strictly followed during installation to maintain thermal performance and mechanical integrity. Check for lead-free compliance status if required by specific environmental regulations.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling with minimal switching losses. Evaluate thermal management requirements based on the junction-to-case thermal resistance values provided. Consider the soft recovery profile to mitigate voltage spikes and EMI without additional snubbing components. Verify that the operating junction temperature remains within the specified -55 to +150 °C range under all load conditions.

Diode Arrays Part Context

This part belongs to the HEXFRED family of ultrafast soft recovery diodes designed for efficiency in high-frequency switching environments. The TO-244AB flange mount package facilitates efficient heat dissipation for high-power applications. The dual anode, common cathode configuration allows for bridge rectifier or push-pull topologies within a single module.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the source documentation.

Diode Arrays FAQ

What is the typical reverse recovery time for the HFA280NJ60C?

The typical reverse recovery time (trr) is 39 ns when tested at IF = 1.0A, dif/dt = 200A/µs, and VR = 30V.

How does the soft recovery characteristic benefit circuit design?

The soft recovery eliminates the need for a snubber in most applications, reducing component count and system complexity while minimizing EMI/RFI.

What is the maximum non-repetitive avalanche energy rating?

The maximum non-repetitive avalanche energy (EAS) is 220 µJ, measured with L = 100µH and duty cycle limited by max TJ.

HFA280NJ60CHFA280NJ60C
$44.40
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