HIP2100EIBT

Description：IC GATE DRVR HALF-BRIDGE 8SOIC
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:dcff6aa55eef Category: Gate Drivers Brand: Renesas Electronics Corporation

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Product introduction

HIP2100EIBT is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for HIP2100EIBT

Description：IC GATE DRVR HALF-BRIDGE 8SOIC
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Driven Configuration：Half-Bridge
Channel Type：Independent
Number of Drivers：2
Gate Type：MOSFET (N-Channel)
Voltage - Supply：9V ~ 14V
Logic Voltage - VIL, VIH：4V, 7V
Current - Peak Output (Source, Sink)：2A, 2A
Input Type：Non-Inverting
Rise / Fall Time (Typ)：10ns, 10ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package：8-SOIC-EP
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：114 V

Gate Driver datasheet and documents for HIP2100EIBT

HIP2100EIBT

Gate Driver Overview

The HIP2100EIBT is a high-frequency, 100V half-bridge N-channel power MOSFET driver IC manufactured by Renesas Electronics Corporation. It features two independent gate drivers with matched propagation delays of 8ns maximum for precise dead-time control. The device supports a supply voltage range of 9V to 14V and delivers a peak output current of 2A. It operates within a temperature range of -55°C to +150°C TJ. The component utilizes an SOIC-EP-Narrow-8 package with an exposed pad for thermal management.

Gate Driver Feature Summary

Independent high-side and low-side gate drivers allow flexible dead-time selection and protocol compatibility.
Integrated on-chip bootstrap diode eliminates the need for discrete external components.
Undervoltage protection forces outputs low on both sides to prevent improper switching.
Advanced level-shifter topology ensures safe DC operation while maintaining low-power pulsed benefits.

Gate Driver Applications

High-frequency motor control systems
Industrial inverter drives
AC servo motor applications

Gate Driver Procurement Notes

Verify the specific suffix 'EIBZT' against datasheet documentation, as standard listings often reference 'HIP2100IBZT'. Confirm RoHS compliance status and moisture sensitivity levels prior to integration. Ensure the supplier provides valid traceability documents for automotive or industrial qualification requirements.

Gate Driver Selection Notes

Select this component when independent high-side and low-side control is required for N-channel MOSFETs. The matched 8ns delay specification is critical for applications demanding precise timing margins. Consider the exposed pad package for superior thermal dissipation in high-current environments compared to standard SOIC packages.

Gate Driver Part Context

This part belongs to the HIP2100 series of half-bridge drivers designed for cost-sensitive, high-performance power switching applications. The series emphasizes robust protection features and simplified external circuitry through integrated bootstrap diodes and UVLO mechanisms.