HIP6603BECB

Description：IC GATE DRVR HALF-BRIDGE 8SOIC
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube

SKU:1d589296dada Category: Gate Drivers Brand: Renesas Electronics Corporation

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Product introduction

HIP6603BECB is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for HIP6603BECB

Description：IC GATE DRVR HALF-BRIDGE 8SOIC
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
Driven Configuration：Half-Bridge
Channel Type：Synchronous
Number of Drivers：2
Gate Type：MOSFET (N-Channel)
Voltage - Supply：10.8V ~ 13.2V
Logic Voltage - VIL, VIH：-
Current - Peak Output (Source, Sink)：-
Input Type：Non-Inverting
Rise / Fall Time (Typ)：20ns, 20ns
Operating Temperature：0°C ~ 125°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package：8-SOIC-EP
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：15 V

Gate Driver datasheet and documents for HIP6603BECB

HIP6603BECB

Gate Driver Overview

The HIP6603BECB is a half-bridge gate driver manufactured by Renesas Electronics Corporation, designed for power management applications. It operates in an 8-pin SOIC package and is specifically engineered to control N-channel MOSFETs. The device implements bootstrapping on the upper gate to facilitate high-side switching. It is capable of driving a 3000pF load with a propagation delay of 30ns and a transition time of 50ns.

Gate Driver Feature Summary

Designed for controlling N-channel MOSFETs in power management applications
Implements bootstrapping on the upper gate
Capable of driving a 3000pF load

Gate Driver Applications

Power management systems
N-channel MOSFET control circuits

Gate Driver Procurement Notes

Verify the specific part number HIP6603BECB against official Renesas documentation to ensure compatibility with your design requirements. Confirm that the 8-pin SOIC package and electrical characteristics match your system specifications before procurement. Always check for the latest product information through Renesas sales offices or authorized distributors to avoid discrepancies.

Gate Driver Selection Notes

Select this component when N-channel MOSFET control is required in power management designs. Consider its capability to drive a 3000pF load and its 30ns propagation delay. Ensure the 8-pin SOIC package fits your PCB layout constraints. Verify compatibility with your voltage levels and switching frequency requirements.

Gate Driver Part Context

The HIP6603BECB belongs to Renesas' portfolio of power management integrated circuits (PMIC). It serves as a specialized gate driver within their lineup, focusing on efficient switching control for power electronics. This component supports the development of reliable power conversion systems by providing precise control over external MOSFETs.