HMC408LP3ETR

RF Amplifiers Overview

The HMC408LP3ETR is a GaAs InGaP HBT MMIC power amplifier designed for HiperLAN and UNII frequency bands ranging from 5.1 GHz to 5.9 GHz. It delivers 20 dB of gain with a P1dB of 30 dBm and a noise figure of 6 dB. The device operates on a 5V supply, drawing 750 mA, and is housed in a 16-QFN (3x3) surface-mount package.

RF Amplifiers Feature Summary

• Utilizes GaAs InGaP HBT technology for high-power performance
• Optimized for HiperLAN and UNII wireless standards
• Integrated monolithic microwave integrated circuit design

RF Amplifiers Applications

• HiperLAN communication systems
• UNII band wireless infrastructure
• 5 GHz RF signal chain power amplification

RF Amplifiers Procurement Notes

Verify component status as the part may be discontinued or subject to limited supply constraints. Confirm RoHS compliance and MSL rating prior to integration. Check for authorized distributor availability and lead time uncertainties due to temporary supply restrictions.

RF Amplifiers Selection Notes

Select this component for applications requiring high output power in the 5.1-5.9 GHz range. Ensure thermal management supports the 750 mA current draw. Verify compatibility with 5V supply rails and 16-QFN footprint constraints during PCB layout.

RF Amplifiers Part Context

This part belongs to the Analog Devices HMC series of RF amplifiers. It is specifically engineered for high-power applications in the 5 GHz ISM/UNII bands, leveraging HBT technology for efficiency and linearity in compact surface-mount packages.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for end-of-life alternatives.