HMC562

RF Amplifiers Overview

The HMC562 is a GaAs PHEMT MMIC distributed driver amplifier die operating from 2 to 35 GHz. It provides 12.5 dB gain, +19 dBm output IP3, and +12 dBm output power at 1 dB compression. The device requires an 8V supply with 80 mA current draw. Input and output ports are DC blocked and internally matched to 50 Ohms.

RF Amplifiers Feature Summary

• Distributed amplifier topology for wideband performance
• Internally matched to 50 Ohms for easy integration
• DC blocked input and output ports

RF Amplifiers Applications

• Electronic Warfare (EW) systems
• Electronic Countermeasures (ECM)
• Radar driver amplifiers
• Test instrumentation equipment

RF Amplifiers Procurement Notes

Verify the specific manufacturer source, as Analog Devices Inc. and Micross Components both list this part number. Confirm the package type matches your design requirements, as it is a bare die intended for integration into Multi-Chip Modules (MCMs). Ensure compatibility with the required 8V supply voltage and 80 mA current consumption during procurement validation.

RF Amplifiers Selection Notes

Select this component when a wideband driver amplifier is needed up to 35 GHz. It is suitable for applications requiring high linearity and moderate gain in a small form factor. Consider the bare die format for custom PCB or MCM designs rather than standard surface-mount packages.

RF Amplifiers Part Context

This component belongs to the category of GaAs MMIC driver amplifiers. It is designed for high-frequency applications where broadband performance is critical. The technology utilizes PHEMT processes to achieve the specified gain and linearity metrics across the 2-35 GHz range.

RF Amplifiers Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.