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HMC637ALP5ETR is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is IC RF AMP VSAT 0HZ-6GHZ 32QFN. Review the specifications below when checking this part for your BOM.
The HMC637ALP5ETR is a GaAs pHEMT MMIC distributed power amplifier from Analog Devices Inc., designed for VSAT applications. It operates over a frequency range of 0 Hz to 6 GHz with a supply voltage of 12 V and current consumption of 400 mA. The device provides a gain of 13 dB, an output P1dB of 29 dBm, and an output IP3 of 44 dBm. It features a noise figure of 5 dB and utilizes a 32-VFQFN (5x5 mm) surface-mount package.
Verify the specific suffix 'E' against the official datasheet to confirm RoHS compliance status and lead times. Ensure the ordering part number matches the exact tape-and-reel quantity specified in the manufacturer's documentation. Cross-reference the MSL rating with your assembly process requirements to prevent moisture damage during soldering.
Select this component when a wideband, high-linearity power amplifier is required for frequencies up to 6 GHz. The 13 dB gain and 29 dBm P1dB make it suitable for driving subsequent stages in signal chains. Consider the 12 V supply requirement and thermal management needs associated with the 400 mA current draw in your PCB layout design.
This part belongs to the HMC637 series of wideband distributed amplifiers manufactured by Analog Devices Inc. It is functionally identical to the HMC637ALP5E but supplied in tape-and-reel packaging for automated surface-mount assembly. The series is characterized by its flat gain response across the operational bandwidth.
HMC637ALP5E is the direct equivalent in tray packaging.
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