HMC7229LS6

RF Amplifiers Overview

The HMC7229LS6 is a four-stage GaAs pHEMT MMIC power amplifier operating from 37 GHz to 40 GHz. It features an integrated, temperature-compensated power detector. The device provides a typical gain of 24 dB and a saturated output power of +32 dBm. It operates on a single 6 V supply with a current consumption of 1.2 A. Key performance metrics include a P1dB compression point of 29.5 dBm and an OIP3 of 37 dBm. The input return loss is 9.5 dB, and the maximum power dissipation is 9.7 W. The component is housed in a 16-lead LCQFN (6x6) package.

RF Amplifiers Feature Summary

• Four-stage GaAs pHEMT MMIC architecture for high-power amplification
• Integrated on-chip temperature-compensated power detector
• Single-supply operation at 6 V
• Designed for point-to-point radio applications

RF Amplifiers Applications

• Point-to-point radios
• Wireless communication systems
• Microwave link infrastructure

RF Amplifiers Procurement Notes

Verify the specific ordering suffix and revision level against the manufacturer's latest documentation to ensure compatibility with system requirements. Confirm that the 16-LCQFN package dimensions align with the PCB footprint design. Check for any updated thermal management guidelines associated with the 9.7 W power dissipation rating. Ensure that the supply voltage and current specifications match the available power rails in the target application environment.

RF Amplifiers Selection Notes

Select this component when a high-output power level near 1 W is required in the E-band frequency range. The integrated power detector simplifies biasing and monitoring circuits by eliminating the need for external sensing components. Consider the thermal constraints imposed by the 9.7 W dissipation when designing the heat sink or PCB layout. Verify that the 24 dB gain meets the system link budget without requiring additional intermediate amplification stages.

RF Amplifiers Part Context

This device belongs to the Analog Devices HMC series of monolithic microwave integrated circuits. It utilizes GaAs pHEMT technology to achieve high efficiency and linearity in a compact form factor. The integration of the power detector distinguishes it from standard power amplifiers that require external monitoring solutions. The component is designed for robust performance in demanding wireless infrastructure environments.

RF Amplifiers Replacement Considerations

No public confirmed substitute part numbers are identified.