HMC994LS6

RF Amplifiers Overview

The HMC994LS6 is a GaAs pHEMT MMIC distributed wideband power amplifier manufactured by Analog Devices Inc. It operates from DC to 30 GHz, providing 13 dB of gain and an output power of 0.5 W (27 dBm). The device features a die package suitable for high-frequency applications requiring broad bandwidth and linear amplification in the millimeter-wave spectrum.

RF Amplifiers Feature Summary

• Distributed architecture enables operation from DC to 30 GHz
• GaAs pHEMT technology ensures high linearity and gain
• Integrated wideband power amplifier design

RF Amplifiers Applications

• VSAT systems
• Point-to-point microwave links
• Electronic warfare systems
• Test and measurement equipment

RF Amplifiers Procurement Notes

Verify the specific suffix LS6 against official Analog Devices documentation to confirm pinout and thermal specifications. Ensure compatibility with DC-30 GHz system requirements. Check for export control restrictions under U.S. regulations before procurement.

RF Amplifiers Selection Notes

Select this component for applications requiring flat gain across a multi-octave bandwidth up to 30 GHz. Consider the die package format for integration into custom RF modules. Evaluate thermal management needs given the 0.5W output capability in a small form factor.

RF Amplifiers Part Context

Part of the HMC994 series of distributed amplifiers. Designed for high-performance RF front-ends where wideband coverage and moderate output power are critical. Complements other Analog Devices MMICs for complete solution designs.

RF Amplifiers Replacement Considerations

No direct public substitute part numbers are confirmed. Evaluate alternative distributed amplifiers from Analog Devices or competitors based on gain, bandwidth, and output power requirements.