HN1D05FE,LF

Diode Arrays Overview

The HN1D05FE is a silicon epitaxial planar switching diode manufactured by Toshiba Semiconductor and Storage. It features a dual-diode configuration within an ES6 surface-mount package, offering high-voltage switching capabilities with a maximum repetitive peak reverse voltage of 420 V and a continuous average rectified current rating of 100 mA per unit. The device exhibits low forward voltage characteristics, typically 1.0 V at 100 mA, alongside a fast reverse recovery time of 0.5 µs. Electrical performance includes a maximum reverse leakage current of 0.1 µA at 400 V and a total capacitance of 4.3 pF. The component supports junction temperatures up to 150 °C.

Diode Arrays Feature Summary

• Dual-diode structure in a compact ES6 surface-mount package for space-constrained designs
• High-voltage capability with a 420 V peak reverse voltage rating
• Fast switching performance characterized by a 0.5 µs typical reverse recovery time
• Low power consumption through minimized forward voltage drop and reverse leakage current

Diode Arrays Applications

• High-voltage switching circuits
• General-purpose rectification in industrial equipment
• Signal processing applications requiring fast recovery

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and reel specifications. Confirm that the intended operating conditions remain within the absolute maximum ratings defined in the datasheet. Ensure compliance with export regulations and environmental directives applicable to your region before finalizing procurement.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high-voltage isolation in a minimal footprint. The dual-diode arrangement allows for efficient bridge or clamp configurations without occupying excessive board area. Evaluate thermal derating requirements carefully, as the power dissipation rating is limited to 100 mW. Consider the fine pin pitch during layout to prevent electrostatic discharge damage.

Diode Arrays Part Context

This switching diode belongs to Toshiba's lineup of small-signal semiconductor devices designed for modern electronic systems. It complements other discrete components used in power management and signal conditioning stages. The ES6 package aligns with industry standards for automated surface-mount assembly, facilitating integration into high-density printed circuit boards.

Diode Arrays Replacement Considerations

Consult official Toshiba substitution guides for verified equivalent part numbers. Do not assume cross-compatibility with generic diodes due to specific reverse recovery and leakage characteristics.

Diode Arrays FAQ

What is the internal circuit configuration of the HN1D1D05FE?

The device contains two independent diodes arranged in a dual configuration. Pin 1 serves as Anode 1, Pin 6 as Cathode 1, Pin 4 as Anode 2, and Pin 3 as Cathode 2. Pins 2 and 5 are not connected.

How does the package design impact handling procedures?

The ES6 package features a fine pin pitch, requiring careful handling to avoid electrostatic discharge damage. Users should implement appropriate ESD protection measures during assembly and testing.

What is the maximum non-repetitive peak forward surge current?

The absolute maximum rating for non-repetitive peak forward surge current (IFSM) is 2 A, measured with a pulse width of 10 ms.