HN4D02JU(TE85L,F)

Diode Arrays Overview

The HN4D02JU(TE85L,F) is a quad ultra-high-speed switching diode manufactured by Toshiba Electronic Devices & Storage Corporation. It features a silicon epitaxial planar construction in a USV package with five terminals. Key electrical parameters include a maximum reverse voltage of 80 V, an average forward current of 100 mA per unit, and a total power dissipation of 200 mW. The device exhibits a typical reverse recovery time of 1.6 ns and a total capacitance of 0.9 pF at 1 MHz.

Diode Arrays Feature Summary

• Ultra-fast switching capability with a typical reverse recovery time of 1.6 ns
• Low forward voltage drop characteristics for efficient signal handling
• Minimal total capacitance to reduce parasitic effects in high-frequency circuits

Diode Arrays Applications

• High-speed logic circuit applications
• Clamping and protection circuits requiring fast response
• Pulse generation and shaping networks

Diode Arrays Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the intended operating conditions remain within the absolute maximum ratings defined in the datasheet to maintain product reliability.

Diode Arrays Selection Notes

Select this component when circuit designs demand minimal reverse recovery time and low capacitance for signal integrity. The quad configuration allows space-saving integration compared to discrete single diodes. Evaluate thermal management requirements carefully, as the total power dissipation rating is limited to 200 mW across all units within the package.

Diode Arrays Part Context

This component belongs to Toshiba's HN4 series of ultra-high-speed switching diodes. It utilizes a silicon epitaxial planar technology designed specifically for applications requiring rapid transition speeds. The USV package provides a compact footprint suitable for surface-mount assembly in dense electronic assemblies.

Diode Arrays Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements may not match the specific 1.6 ns reverse recovery time or 0.9 pF capacitance values required for high-speed performance.