Diode Arrays HSM226STR-E product image

HSM226STR-E

$0.44
  • Description:DIODE SCHOTTKY BARRIER
  • Series:*

SKU:37ee2ef85719 Category: Brand:

  
  • Quantity
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HSM226STR-E is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is DIODE SCHOTTKY BARRIER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HSM226STR-E

  • Description:DIODE SCHOTTKY BARRIER
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Diode Configuration:-
  • Technology:-
  • Voltage - DC Reverse (Vr) (Max):-
  • Current - Average Rectified (Io) (per Diode):-
  • Voltage - Forward (Vf) (Max) @ If:-
  • Speed:-
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Operating Temperature - Junction:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for HSM226STR-E

HSM226STR-E

Diode Arrays Overview

The HSM226STR-E is a silicon Schottky barrier diode array manufactured by Renesas Electronics Corporation. It is designed for high-speed switching applications within the discrete semiconductor product category. The device features a repetitive peak reverse voltage (VRRM) of 25 V and is supplied in a surface-mount package configuration suitable for automated assembly processes.

Diode Arrays Feature Summary

  • Utilizes Schottky barrier technology to achieve fast switching speeds
  • Configured as a diode array for compact circuit integration
  • Constructed with silicon material for reliable high-speed performance

Diode Arrays Applications

  • High-speed switching circuits
  • General-purpose rectification in low-voltage systems
  • Signal processing applications requiring fast recovery

Diode Arrays Procurement Notes

Verify the exact package type and tape-and-reel specifications against the official Renesas datasheet before ordering. Confirm that the component meets all required electrical ratings for your specific design environment. Ensure compliance with RoHS directives and other relevant regulatory standards applicable to your region. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm authenticity and availability status prior to purchase.

Diode Arrays Selection Notes

Select this component when a low forward voltage drop and rapid switching capability are required in space-constrained designs. The Schottky barrier construction minimizes power loss during transitions compared to standard PN junction diodes. Consider the 25 V reverse voltage rating to ensure adequate margin for the target application's operating conditions. Evaluate the thermal characteristics and package size to fit the PCB layout constraints effectively.

Diode Arrays Part Context

This part belongs to Renesas' discrete semiconductor portfolio, specifically within the diode array segment. It complements the company's broader range of analog and power management solutions. The HSM226 series provides essential passive components for signal conditioning and power conversion tasks in consumer and industrial electronics.

Diode Arrays Replacement Considerations

Consult the official Renesas replacement guide or contact technical support for verified substitute part numbers. Do not assume cross-compatibility with generic Schottky diodes without verifying pinout and electrical parameter alignment.

HSM226STR-EHSM226STR-E
$0.44
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