RF Diode HSMS-2700-TR1G product image

HSMS-2700-TR1G

  • Description:DIODE SCHOTTKY 15V 350MW SOT23-3
  • Series:-

SKU:65df805b4b20 Category: Brand:

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HSMS-2700-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is DIODE SCHOTTKY 15V 350MW SOT23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-2700-TR1G

  • Description:DIODE SCHOTTKY 15V 350MW SOT23-3
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):15V
  • Current - Max:350 mA
  • Capacitance @ Vr, F:6.7pF @ 0V, 1MHz
  • Resistance @ If, F:650mOhm @ 100mA, 1MHz
  • Power Dissipation (Max):350 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

RF Diode datasheet and documents for HSMS-2700-TR1G

HSMS-2700-TR1G

RF Diode Overview

The HSMS-2700-TR1G is a single Schottky RF diode manufactured by Broadcom Limited. It features a peak reverse voltage of 15V and a maximum forward current of 350 mA with a power dissipation rating of 350 mW. The device exhibits a capacitance of 6.7 pF at 0V and 1 MHz, along with a resistance of 650 milliohms at 100 mA and 1 MHz. It operates within a junction temperature range up to 150°C and is housed in an SOT-23-3 package.

RF Diode Feature Summary

  • Single Schottky configuration for RF applications
  • Low capacitance characteristic suitable for high-frequency operation
  • Compact surface-mount packaging design

RF Diode Applications

  • RF signal detection
  • Mixing circuits
  • Switching applications

RF Diode Procurement Notes

This component is officially classified as obsolete and no longer manufactured by the producer. Verification of availability should focus on remaining stock from authorized distributors or secondary market suppliers. Buyers must confirm the specific revision level and ensure compliance with end-of-life notifications issued by the manufacturer prior to procurement decisions.

RF Diode Selection Notes

Engineers should evaluate alternative components due to the discontinued status of this part. Selection criteria must prioritize matching the 15V reverse voltage, 350 mA current capacity, and SOT-23-3 footprint requirements. Compatibility checks should include verifying equivalent capacitance and thermal performance characteristics to ensure circuit integrity in existing designs.

RF Diode Part Context

The HSMS-2700 series represents a line of silicon Schottky barrier diodes designed specifically for radio frequency applications. This particular variant utilizes a single-diode architecture within a small outline transistor package. The series is engineered to provide low noise and fast switching speeds, making it a standard choice for RF front-end modules in communication devices.

RF Diode Replacement Considerations

RB411DT146 is listed as a similar replacement option by Rohm Semiconductor.

HSMS-2700-TR1GHSMS-2700-TR1G

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