RF Diode HSMS-282P-TR1G product image

HSMS-282P-TR1G

  • Description:RF DIODE SCHOTTKY 15V SOT-363
  • Series:-

SKU:21e97682e16c Category: Brand:

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HSMS-282P-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 15V SOT-363. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-282P-TR1G

  • Description:RF DIODE SCHOTTKY 15V SOT-363
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 2 Pair Series Connection
  • Voltage - Peak Reverse (Max):15V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:12Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363

RF Diode datasheet and documents for HSMS-282P-TR1G

HSMS-282P-TR1G

RF Diode Overview

The HSMS-282P-TR1G is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited, housed in a SOT-363 package. It features a Bridge Quad configuration with four matched silicon diodes on adjacent wafer sites for consistent performance. Key electrical specifications include a maximum breakdown voltage of 15 V, a typical forward voltage of 340 mV at 1 mA, and a reverse leakage current of 100 nA at 15 V. The device exhibits a junction capacitance of 1 pF at 0 V and dynamic resistance of 12 Ω at 5 mA. It operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Bridge quad configuration allows flexible circuit topologies such as sampling or differential detection
  • Matched diodes fabricated from adjacent wafer sites ensure high consistency
  • Low series resistance and low forward voltage support efficient RF signal processing
  • SOT-363 package provides improved thermal conductivity compared to smaller packages

RF Diode Applications

  • Sampling circuits utilizing the open bridge structure
  • Differential detectors requiring matched diode pairs
  • Voltage doubler configurations for power monitoring

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for Product Change Notices (PCN) regarding manufacturing site updates. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package damage during assembly.

RF Diode Selection Notes

Select this part when a bridge quad topology is required for specific mixer or detector architectures. The SOT-363 package offers a balance between board space savings and thermal dissipation capabilities. Verify that the 15 V breakdown voltage meets the peak inverse voltage requirements of the target RF application.

RF Diode Part Context

This component belongs to the HSMS-282x family of surface mount RF Schottky diodes. The family includes various configurations like single, dual, and other quad types to provide design flexibility. The HSMS-282P specifically utilizes the Bridge Quad arrangement, distinguishing it from common cathode or ring quad variants within the same series.

RF Diode Replacement Considerations

HSMS-282R-BLKG

HSMS-282P-TR1GHSMS-282P-TR1G

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