HUF75307T3ST136

$0.27

Description：13A, 55V, 0.090 OHM, N CHANNEL,
Series：*
Mfr：Harris Corporation
Package：Bulk

SKU:d0ac4ad63423 Category: Single FETs, MOSFETs Brand: Harris Corporation

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Product introduction

HUF75307T3ST136 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is 13A, 55V, 0.090 OHM, N CHANNEL,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF75307T3ST136

Description：13A, 55V, 0.090 OHM, N CHANNEL,
Series：*
Mfr：Harris Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for HUF75307T3ST136

HUF75307T3ST136

Single FETs, MOSFETs Overview

The HUF75307T3ST136 is a power field-effect transistor manufactured by Harris Corporation. It is an N-channel silicon metal-oxide semiconductor FET designed for single-element applications. The device features a maximum drain-source breakdown voltage of 55 V and supports a continuous drain current of 2.6 A. Its maximum on-resistance is specified at 0.09 ohms. The component operates in enhancement mode and includes a built-in diode. It is housed in a TO-261AA package, also classified as R-PDSO-G4, with four terminals and a plastic/epoxy body.

Single FETs, MOSFETs Feature Summary

N-channel silicon MOSFET technology
Built-in diode configuration
Enhancement mode operation

Single FETs, MOSFETs Applications

Power switching circuits
DC-DC converter modules
Motor control interfaces

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as Harris Corporation's semiconductor assets were acquired by Renesas Electronics. Confirm the specific suffix 'T136' against official datasheets to ensure it denotes the correct tape-and-reel packaging variant rather than a different functional specification. Cross-reference the part number with current Renesas documentation to validate availability and compliance status.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, moderate-current switching applications requiring a compact surface-mount footprint. The 55V rating suits 12V or 24V systems. Ensure thermal management aligns with the 0.09 ohm on-resistance dissipation requirements. Verify that the TO-261AA package dimensions fit the target PCB layout constraints.

Single FETs, MOSFETs Part Context

This part belongs to the HUF7530x series of power MOSFETs from Harris Corporation. These devices are engineered for efficient power conversion and switching tasks. The series typically offers optimized gate charge characteristics suitable for high-frequency operations. The TO-261AA package provides a balance between thermal performance and space efficiency for consumer and industrial electronics.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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