HUFA76429D3ST

Single FETs, MOSFETs Overview

The HUFA76429D3ST is an N-channel power MOSFET manufactured by Fairchild Semiconductor. It utilizes UltraFET process technology to achieve low on-resistance per silicon area. The device features a TO-252AA (DPAK) surface-mount package and is designed for high-efficiency switching applications. Key electrical characteristics include a drain-source voltage rating of 100V, a continuous drain current of 20A, and a maximum on-resistance of 0.054 ohms at 10V gate drive. It operates within a temperature range of -55°C to +175°C junction temperature.

Single FETs, MOSFETs Feature Summary

• UltraFET process technology for optimized on-resistance
• High avalanche energy capability
• Low reverse recovery time and stored charge in the body diode
• Logic-level gate drive compatibility

Single FETs, MOSFETs Applications

• Switching regulators
• Motor drivers
• Relay drivers
• Low-voltage bus switches

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Fairchild Semiconductor or its successor entities such as onsemi or Renesas, given historical corporate acquisitions. Confirm the specific datasheet revision and RoHS compliance status prior to integration. Ensure the component matches the DPAK-3 physical footprint and pinout configuration required by the target PCB layout design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust N-channel switching with moderate current handling capabilities. The logic-level threshold allows direct driving from standard logic outputs. Consider thermal management requirements due to the specified power dissipation limits in the TO-252 package when evaluating system efficiency constraints.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET family of power MOSFETs developed by Fairchild Semiconductor. These devices are engineered for superior performance in power management circuits. The HUF prefix typically denotes UltraFET technology, while the suffix indicates the specific package type and lead-free manufacturing process variations.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with HUF76629D3ST for similar specifications. Verify compatibility with equivalents from onsemi or Renesas under the same part number lineage. Ensure functional equivalence in terms of voltage ratings, current capacity, and package dimensions before substitution.