Single FETs, MOSFETs HUFA76619D3S product image

HUFA76619D3S

$0.37
  • Description:MOSFET N-CH 100V 18A TO252AA
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tube

SKU:8e2f3c8b3cf0 Category: Brand:

  
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HUFA76619D3S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 18A TO252AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUFA76619D3S

  • Description:MOSFET N-CH 100V 18A TO252AA
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:85mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:767 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):75W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for HUFA76619D3S

HUFA76619D3S

Single FETs, MOSFETs Overview

The HUFA76619D3S is a single N-channel Logic Level UltraFET Power MOSFET manufactured by onsemi. It features a TO-252AA (DPAK) surface-mount package with a drain flange for thermal management. The device supports a continuous drain current of 18A at 25°C and withstands a drain-to-source voltage of 100V. Key electrical characteristics include a maximum on-resistance of 0.087Ω at VGS=5V and 0.085Ω at VGS=10V, with a gate threshold voltage ranging from 1V to 3V. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Logic level gate drive capability enabling direct control from standard logic interfaces
  • Ultra-low on-resistance optimized for high efficiency power switching applications
  • Designed to meet automotive industry reliability standards including AEC-Q101
  • Includes temperature compensated PSPICE and SABER simulation models

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • DC-DC converter circuits
  • Motor driver stages
  • Load switch implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing; adding 'T' requests the tape and reel variant instead of the standard tube packaging. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure the supplier provides traceability documentation consistent with ISO9000 and QS9000 quality systems certification standards.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust 100V blocking capability combined with low conduction losses. The logic level threshold allows efficient driving without complex gate drivers. Consider the thermal resistance specifications for heatsinking requirements in high-current scenarios. Verify compatibility with available simulation models for circuit validation before finalizing the design.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET series of power MOSFETs originally developed by Fairchild Semiconductor and now managed by onsemi. The series focuses on combining low on-resistance with fast switching speeds. The D3S suffix specifically denotes the TO-252AA surface mount package configuration used in this component.

Single FETs, MOSFETs Replacement Considerations

HUFA76619D3ST

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is 18A at a case temperature of 25°C.

Does this component support unclamped inductive switching?

Yes, the datasheet provides UIS rating curves detailing the device's capability under unclamped inductive switching conditions.

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