IAUCN04S7L009ATMA1

Single FETs, MOSFETs Overview

The IAUCN04S7L009ATMA1 is an OptiMOS™ 7 automotive power MOSFET featuring a single N-channel enhancement mode configuration. It utilizes PG-TDSON-8-34 packaging and supports a maximum drain-source voltage of 40 V with a continuous chip-limited drain current of 275 A. The device exhibits a typical on-state resistance of 0.80 mΩ at VGS=10 V and a gate threshold voltage of 1.5 V. Operating temperatures range from -55 °C to +175 °C, with a total power dissipation of 129 W.

Single FETs, MOSFETs Feature Summary

• Optimized for automotive applications with extended qualification beyond AEC-Q101 standards
• Features enhanced electrical testing and robust design characteristics
• Supports MSL1 classification up to 260°C peak reflow temperature
• Includes 100% avalanche testing for improved reliability

Single FETs, MOSFETs Applications

• General automotive electronic systems
• Automotive braking solutions
• Electric power steering (EPS) circuits
• Traction inverters for two-wheelers and three-wheelers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets the required RoHS compliance standards for your manufacturing process. Confirm that the PG-TDSON-8-34 package footprint aligns with your PCB layout requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling capabilities within a compact surface-mount form factor. The low on-state resistance minimizes conduction losses in high-efficiency power stages. Consider the 175 °C junction temperature rating for operation in thermally constrained automotive environments where standard commercial components may fail.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 7 family, which employs advanced trench technology to deliver superior performance in automotive power switching applications. The series focuses on reducing size while maintaining high robustness against electrical stress. It serves as a specialized solution for modern vehicle architectures demanding increased power density and thermal resilience.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Do not assume compatibility based solely on matching voltage or current ratings without verifying package dimensions and thermal characteristics.