IDT71P74604S167BQG

Memory IC Overview

The IDT71P74604S167BQG is an 18Mb QDR II SRAM with a 512K x 36 organization. It features independent read and write data ports supporting concurrent transactions at 167 MHz. The device utilizes a 165-ball, 1.0mm pitch, 13mm x 15mm CABGA package. Core voltage (VDD) operates between 1.7V and 1.9V, while I/O supply (VDDQ) ranges from 1.4V to 1.9V. Operating temperature spans 0°C to +70°C.

Memory IC Feature Summary

• Supports simultaneous read and write operations through separate data ports for maximum throughput
• Generates echo clocks precisely timed to output data for reliable downstream clocking
• Features programmable output impedance to adapt to varying system loads and transmission lines
• Includes JTAG interface for boundary scan testing and identification

Memory IC Applications

• High-speed networking equipment requiring parallel processing
• Telecommunications infrastructure systems
• Data acquisition systems demanding high bandwidth memory

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required clock frequency of 167 MHz. Confirm that the CABGA package dimensions align with the target PCB layout constraints. Ensure power supply specifications meet the core and I/O voltage requirements defined in the datasheet.

Memory IC Selection Notes

Select this component when system architecture requires independent read and write paths to eliminate bidirectional bus contention. Consider the scalable output drivers if interfacing with different logic families or transmission line impedances. Evaluate the commercial temperature range against environmental operating conditions.

Memory IC Part Context

This part belongs to the QDR II family developed by Integrated Device Technology, now Renesas Electronics. These synchronous memories utilize quad-data-rate technology to achieve high performance without increasing clock speeds significantly compared to standard SRAMs.

Memory IC Replacement Considerations

IDT71P74804S167BQG