IDT71V25761S200PFI8

Memory IC Overview

The IDT71V25761S200PFI8 is a synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 Megabits, organized as 128K words by 36 bits. The device supports parallel data interfaces and operates with a maximum clock frequency of 200 MHz, achieving an access time of 5 nanoseconds. It functions within a supply voltage range of 3.135V to 3.465V and is rated for industrial operating temperatures from -40°C to +85°C. The component is housed in a 165-CABGA package measuring 13x15 mm.

Memory IC Feature Summary

• Supports high-speed synchronous SDR operations with a 200 MHz clock rate
• Features a wide 36-bit data bus width for efficient data throughput
• Utilizes a compact 165-pin C-BGA surface-mount package
• Designed for reliable operation across extended industrial temperature ranges

Memory IC Applications

• High-performance networking equipment requiring fast memory buffering
• Industrial automation systems needing robust data storage
• Telecommunications infrastructure utilizing parallel interface protocols

Memory IC Procurement Notes

Verify the specific suffix 'BQI' or 'PFI8' against official Renesas documentation to confirm exact package type and lead finish specifications. Confirm RoHS compliance status as historical records indicate potential non-compliance for certain variants. Ensure the source document explicitly lists this part number as active or obsolete before procurement planning.

Memory IC Selection Notes

Select this component when a 36-bit wide data path is required for system architecture compatibility. The 200 MHz speed class suits applications demanding low latency in synchronous environments. Verify that the PCB layout supports the 165-CABGA footprint and that the power supply rails can maintain the specified 3.135V to 3.465V window under all load conditions.

Memory IC Part Context

This SRAM belongs to the IDT 71V25761 family of synchronous memories. The family is characterized by its use of ZBT-like performance characteristics within a standard SDR framework. It serves as a high-density memory solution for embedded systems where parallel connectivity and deterministic timing are critical design constraints.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers for this specific variant are not available in the provided reference material.