IDT71V3577SA80BQGI

Memory IC Overview

The IDT71V3577SA80BQGI is a high-speed synchronous static random access memory (SRAM) organized as 128K x 36. It features a flow-through architecture with no registers in the data output path, allowing for immediate data availability following the clock-to-data access time delay. The device supports fast access times of 8.0 ns and operates at clock frequencies up to 100 MHz. It utilizes a 3.3V core power supply and 3.3V I/O levels. The component includes an internal burst address counter that provides four cycles of data for a single address, selectable between linear or interleaved burst modes via the LBO input.

Memory IC Feature Summary

• Flow-through architecture providing immediate data output without pipeline latency
• Internal burst address counter supporting four-cycle data sequences per base address
• Configurable linear or interleaved burst order selection via the LBO input pin
• Self-timed write cycle controlled by global write enable (GW) and byte write enables (BWx)

Memory IC Applications

• High-performance cache memory systems requiring low-latency data access
• Network routing equipment utilizing synchronous parallel interfaces
• Industrial control systems operating within commercial temperature ranges

Memory IC Procurement Notes

Verify the specific suffix BQGI against official Renesas documentation to confirm package type and moisture sensitivity level. Confirm the part status, as this model may be subject to discontinuation notices. Ensure compatibility with 3.3V logic levels and check for RoHS compliance requirements relative to the manufacturing date code.

Memory IC Selection Notes

Select this component when a 128K x 36 organization is required with synchronous parallel interface capabilities. The flow-through design is suitable for applications prioritizing minimal read latency over pipelined throughput. Ensure the system design accommodates the 119-pin BGA footprint and adheres to the specified 3.3V power supply tolerances for both core and I/O domains.

Memory IC Part Context

This device belongs to the IDT71V3577/79 family of 3.3V synchronous SRAMs manufactured by Renesas Electronics Corporation. The family shares common architectural features including burst counters and self-timed writes, differentiated primarily by density and package options. The 'SA' designation indicates the inclusion of optional Boundary Scan JTAG interface pins compliant with IEEE 1149.1 standards.

Memory IC Replacement Considerations

IDT71V3577S80BQGI