IDWD50G120C5XKSA1

Single Diodes Overview

IDWD50G120C5XKSA1 is a single-channel Silicon Carbide (SiC) Schottky diode from Infineon Technologies, part of the CoolSiC family. It features a TO-247-2 through-hole package with a tab for thermal management. Key electrical parameters include a repetitive reverse voltage (Vrrm) of 1.2 kV and a continuous forward current (If) of 50 A. The device exhibits a typical forward voltage (Vf) of 1.5 V at rated current and supports a non-repetitive surge current (Ifsm) of 325 A. Reverse leakage current (Ir) is specified at 25 uA. It operates within a junction temperature range of -55°C to +175°C and has a power dissipation rating of 789 W.

Single Diodes Feature Summary

• Utilizes Silicon Carbide (SiC) technology for superior thermal performance and high-temperature stability compared to silicon alternatives.
• Features a zero-recovery charge characteristic inherent to Schottky rectifiers, enabling ultra-fast switching speeds and minimizing switching losses.
• Designed with a rugged TO-247-2 package to facilitate efficient heat dissipation in high-power applications.

Single Diodes Applications

• High-frequency DC/DC converters
• Uninterruptible Power Supplies (UPS)
• Industrial motor drives

Single Diodes Procurement Notes

Verify the complete ordering code IDWD50G120C5XKSA1 against official Infineon documentation to ensure correct suffix identification. Confirm RoHS compliance status via the manufacturer's datasheet. Check for specific tape-and-reel or tube packaging variants if required by assembly equipment. Validate that the TO-247-2 footprint matches your PCB design constraints before procurement.

Single Diodes Selection Notes

Select this component when designing circuits requiring high blocking voltage and low forward conduction losses. The 1.2 kV rating suits medium-voltage systems, while the 50 A current capacity supports moderate power levels. Consider the TO-247-2 package for board-mount solutions where thermal resistance is critical. Ensure gate drive or circuit protection aligns with the 325 A surge capability for fault conditions.

Single Diodes Part Context

This device belongs to Infineon’s CoolSiC™ generation 5 discrete diode portfolio. It complements other SiC components like MOSFETs in the same series, offering matched thermal characteristics. The IDWD prefix indicates a through-hole variant, distinct from surface-mount options, targeting robust industrial and automotive-grade assemblies.

Single Diodes Replacement Considerations

Direct substitutes must match the 1.2 kV / 50 A SiC Schottky specification in a TO-247-2 package. Verify equivalent Vf and Ir values to maintain system efficiency. Cross-reference with Infineon’s internal replacement guides for any updated generation codes.