IGLR65R200D2XUMA1

$2.47

Description：IGLR65R200D2XUMA1
Series：CoolGaN™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:815cd22d1099 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IGLR65R200D2XUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IGLR65R200D2XUMA1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IGLR65R200D2XUMA1

Description：IGLR65R200D2XUMA1
Series：CoolGaN™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.6V @ 710µA
Gate Charge (Qg) (Max) @ Vgs：1.26 nC @ 3 V
Vgs (Max)：-10V
Input Capacitance (Ciss) (Max) @ Vds：91 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：34W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSON-8-8
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IGLR65R200D2XUMA1

IGLR65R200D2XUMA1

Single FETs, MOSFETs Overview

The IGLR65R200D2XUMA1 is a CoolGaN™ G5 single-channel enhancement-mode GaN HEMT in PG-TSON-8 packaging. It features a 650 V drain-source voltage, 240 mΩ maximum on-resistance at 25°C, and 16 A pulsed current capability. Key electrical parameters include 1.3 nC typical gate charge, -10 V continuous gate-source voltage, and operation from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

Enhancement mode normally-off technology ensures safe operation
Ultra-fast switching with no reverse-recovery charge
Capable of reverse conduction for simplified circuit topologies
Superior commutation ruggedness and 2 kV HBM ESD standards

Single FETs, MOSFETs Applications

Industrial power supplies
Telecom power conversion
Datacenter SMPS based on half-bridge hard and soft switching topologies
Totem pole PFC and high frequency LLC converters
Chargers and adapters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XUMA1 corresponds to the reel packaging variant when sourcing. Confirm JEDEC industrial qualification status aligns with target application requirements. Ensure thermal management design accounts for the specified junction-to-ambient resistance values under actual PCB footprint conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high power density and efficiency at 650 V. The low gate charge supports rapid switching speeds suitable for high-frequency topologies. Evaluate thermal performance against the 3.7 °C/W junction-to-case resistance for heat dissipation planning.

Single FETs, MOSFETs Part Context

This device belongs to Infineon’s CoolGaN™ G5 family, utilizing 200 mm wafer technology for narrow production tolerances. It is designed as a highly efficient gallium nitride transistor for power conversion, facilitating miniaturized form factors and reduced system BOM costs across consumer and industrial sectors.