Diode Arrays IMP11T110 product image

IMP11T110

$0.15
  • Description:DIODE ARRAY GP 80V 100MA SMT6
  • Series:-

SKU:effffad1a5e3 Category: Brand:

  
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IMP11T110 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is DIODE ARRAY GP 80V 100MA SMT6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for IMP11T110

  • Description:DIODE ARRAY GP 80V 100MA SMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Diode Configuration:2 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):100mA
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 70 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SMT6
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for IMP11T110

IMP11T110

Diode Arrays Overview

The IMP11T110 is a dual PNP bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 20 V and a continuous collector current (IC) of 500 mA. The device operates within a maximum power dissipation (Pd) of 300 mW and has a transition frequency (fT) of 350 MHz. It utilizes an SOT-457-6 surface-mount package with a maximum operating temperature of +150 °C. The component is classified as Not Recommended for New Designs (NRND).

Diode Arrays Feature Summary

  • Dual PNP configuration in a compact surface-mount package.
  • High DC current gain capability for efficient switching.
  • Robust thermal performance supporting high-temperature operation.

Diode Arrays Applications

  • General-purpose switching circuits
  • Low-voltage signal processing
  • Driver stages for low-power loads

Diode Arrays Procurement Notes

Verify the Not Recommended for New Designs (NRND) status before integration into new products. Confirm availability through authorized distributors, as production may be limited to existing customer support. Ensure the specific ordering suffix matches the required tape-and-reel or cut-tape packaging format for your assembly line requirements.

Diode Arrays Selection Notes

Select this component for applications requiring dual PNP transistors in a small footprint. Compare the 20 V VCEO and 500 mA IC limits against circuit demands. Consider the 350 MHz fT for high-speed switching needs. Evaluate the SOT-457-6 package constraints for PCB layout and thermal management relative to the 300 mW power dissipation rating.

Diode Arrays Part Context

The IMP11T110 belongs to the IMX9 series of dual bipolar transistors from ROHM. This series focuses on providing matched pairs in ultra-small packages for space-constrained designs. The component serves as a legacy option for designs previously utilizing similar dual PNP configurations, now transitioning out of active new-design promotion.

Diode Arrays Replacement Considerations

Consult ROHM official documentation for direct pin-compatible substitutes. Verify if newer series members offer improved electrical characteristics or extended lifecycle status while maintaining the SOT-457-6 form factor.

IMP11T110IMP11T110
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