IPA60R360P7SE8228XKSA1

Single FETs, MOSFETs Overview

The IPA60R360P7SE8228XKSA1 is a single N-channel Power MOSFET from Infineon’s CoolMOS P7 series, utilizing superjunction technology. It features a drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 9 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 360 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge (Qg) of 13 nC, threshold voltage (Vgs(th)) of 4 V, and power dissipation of 22 W. It operates within a junction temperature range of -40°C to 150°C and is housed in a PG-TO220-FP through-hole package.

Single FETs, MOSFETs Feature Summary

• Integrates CoolMOS P7 superjunction technology for optimized energy efficiency and low conduction losses.
• Provides robust avalanche capability suitable for hard-switching applications.
• Features a TO-220FP through-hole package designed for efficient thermal management.

Single FETs, MOSFETs Applications

• High-frequency switched-mode power supplies
• Active Power Factor Correction (PFC) circuits
• DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'E8228' against the official Infineon datasheet to confirm lead-free compliance and material content declarations. Ensure the ordering part number matches the required RoHS status and packaging format. Cross-reference the manufacturer's latest documentation to validate component authenticity and availability status before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rating and 360 mΩ on-resistance are required for high-efficiency power conversion. The 9 A current rating and TO-220FP package make it suitable for medium-power designs where through-hole mounting is preferred. Consider the 13 nC gate charge for driver compatibility in switching frequency requirements.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS P7 family, representing an evolution in superjunction MOSFETs designed to reduce switching and conduction losses. The series targets improved performance in offline power supplies and motor drives compared to previous generations, offering a balance between cost and efficiency for industrial and consumer applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 600 V / 9 A / 360 mΩ specifications and TO-220FP package. Verify pinout compatibility and thermal resistance characteristics. Check for equivalent gate charge and threshold voltage ranges to ensure circuit stability without redesign.