IPAN65R650CEXKSA1

Single FETs, MOSFETs Overview

The IPAN65R650CEXKSA1 is an N-channel enhancement-mode power MOSFET from Infineon Technologies, utilizing advanced silicon technology. It features a drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 10.1 A at 25°C. The device has a maximum on-state resistance (Rds(on)) of 650 mΩ and a gate threshold voltage (Vgs(th)) typically around 3 V. It operates within a temperature range of -55°C to +175°C, with a power dissipation rating of 86 W in the TO-220FP package.

Single FETs, MOSFETs Feature Summary

• Advanced N-channel silicon MOSFET technology engineered for high-efficiency power switching applications.
• Robust power handling capabilities with a 650 V breakdown voltage suitable for demanding industrial environments.
• Enhanced thermal performance allowing operation up to 175°C junction temperature.

Single FETs, MOSFETs Applications

• High-efficiency power supply designs
• Industrial motor control systems
• General-purpose power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'EX' against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with TO-220FP footprint requirements during PCB layout. Confirm RoHS compliance status through the latest datasheet revision notes before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 650 V rating is required alongside moderate current handling near 10 A. Compare Rds(on) values against competitors for conduction loss optimization. Consider the TO-220FP isolated case connection for mounting flexibility compared to standard TO-220 packages.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's discrete MOSFET portfolio, designed to replace older generations like OptiMOS 5. It offers improved figure-of-merit characteristics for hard-switching applications. The device is distinct from CoolMOS or SiC families, focusing on optimized silicon performance for cost-sensitive high-voltage applications.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage class if lead times are critical. Verify that substitute devices meet the 650 V Vds and 10 A Id requirements without exceeding thermal limits.