IPB027N10N3G

Single FETs, MOSFETs Overview

The UMW IPB027N10N3G is a 100V N-Channel MOSFET in a TO-263 package. It features a maximum drain current of 120A at VGS=10V and an on-resistance below 2.7mΩ at VGS=10V. The device supports a continuous drain current of 48A at TC=25°C and handles up to 192A pulsed current. It has a power dissipation rating of 240W at TC=25°C, a gate charge of 60nC typ., and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Ideal for high-frequency switching and synchronous rectification

Single FETs, MOSFETs Applications

• High-frequency switching
• Synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code UMW IPB027N10N3G against official manufacturer documentation to confirm the TO-263 package and tape-and-reel delivery mode. Ensure that the component meets the required thermal management specifications for the intended application environment. Cross-reference the datasheet electrical characteristics with system requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and efficient high-frequency operation. Consider the thermal performance and package constraints when designing heat dissipation solutions. Evaluate the gate charge and on-resistance trade-offs against other available options to optimize overall system efficiency and switching speed.

Single FETs, MOSFETs Part Context

This part belongs to the UMW 100V N-Channel MOSFET series, designed for power management applications. It utilizes advanced silicon technology to achieve low on-resistance and fast switching capabilities. The TO-263 package provides robust mechanical stability and efficient heat transfer for surface-mount implementations.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives with similar voltage and current ratings. Verify that any substitute maintains comparable on-resistance and gate charge characteristics to ensure circuit performance consistency.