IPB12CNE8N G

Single FETs, MOSFETs Overview

The IPB12CNE8N G is an OptiMOS®2 N-channel power transistor in a PG-TO263-3 package. It features a drain-source voltage of 85 V and a continuous drain current of 67 A at 25 °C. The maximum on-resistance is 12.9 mΩ at VGS=10 V and ID=67 A. Key dynamic parameters include a total gate charge of 64 nC, input capacitance of 3260 pF, and reverse recovery charge of 255 nC. Thermal resistance from junction to case is 1.2 K/W, with a maximum operating temperature of 175 °C.

Single FETs, MOSFETs Feature Summary

• OptiMOS®2 technology providing excellent gate charge and on-resistance product
• Designed for high-frequency switching and synchronous rectification applications
• Qualified according to JEDEC standards for target automotive and industrial applications

Single FETs, MOSFETs Applications

• High-frequency switching circuits
• Synchronous rectification modules
• Automotive power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official database to ensure compatibility with the PG-TO263-3 package variant. Confirm RoHS compliance status and lead-free plating specifications prior to integration into production lines. Cross-reference thermal management requirements with the provided junction-to-case resistance data.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical due to its optimized RDS(on) characteristics. Evaluate the 85 V rating against system voltage peaks to ensure adequate breakdown margin. Consider the 175 °C junction limit for high-temperature environments requiring robust thermal performance without derating.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS®2 family, designed for efficient power conversion. It shares architectural similarities with the IPD, IPI, and IPP variants, differing primarily in the physical mounting package configuration while maintaining identical electrical performance metrics.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same family include IPD12CNE8N G (TO252), IPI12CNE8N G (TO262), and IPP12CNE8N G (TO220). Ensure PCB footprint modifications are accounted for if substituting between these package types.