IPB22N03S4L15ATMA1

Single FETs, MOSFETs Overview

The IPB22N03S4L-15 is an N-channel enhancement mode OptiMOS-T2 power transistor designed for automotive applications. It features a PG-TO263-3-2 package with a maximum drain-source voltage of 30 V and a continuous drain current of 22 A at 25 °C. The device exhibits ultra-low on-state resistance, with a maximum RDS(on) of 14.6 mΩ at VGS=10 V and 22 A. It supports a single-pulse avalanche energy of 20 mJ and operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Automotive AEC-Q101 qualified for high reliability in vehicle environments
• Ultra-low RDS(on) characteristics for efficient power switching
• 100% avalanche tested to ensure robustness against transient overloads
• Green product compliant with RoHS standards

Single FETs, MOSFETs Applications

• Powertrain systems
• Body electronics modules
• General automotive load switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant (PG-TO263-3-2). Confirm that the component meets the exact electrical requirements for your thermal management design, particularly regarding the thermal resistance from junction to case. Ensure compatibility with your assembly process regarding moisture sensitivity level and peak reflow temperatures.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current solution is required for automotive platforms. Consider the thermal performance and package size relative to your PCB layout constraints. Evaluate the gate charge parameters if driving efficiency is critical for your control circuitry. Compare against other OptiMOS-T2 variants if different voltage ratings or package types are needed.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS-T2 family, which utilizes trench technology to achieve low on-resistance and fast switching speeds. The IPB series specifically denotes the TO-263 surface-mount package variant within this lineup. These transistors are engineered to meet the stringent demands of modern automotive electronic control units and power distribution networks.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include IPI22N03S4L-15 and IPP22N03S4L-15, which share identical electrical specifications but differ in package type (PG-TO262-3-1 and PG-TO220-3-1 respectively). Verify pinout compatibility and thermal interface requirements before substituting.