IPD30N12S3L31ATMA1

Single FETs, MOSFETs Overview

The IPD30N12S3L-31 is an N-channel enhancement mode OptiMOS-T power transistor designed for automotive applications. It features a PG-TO252-3-11 package with a drain-source breakdown voltage of 120 V and a continuous drain current of 30 A at 25°C. The maximum on-state resistance is 31 mΩ at VGS=10V. It supports a junction temperature up to 175°C, operates within -55°C to +175°C, and has a total power dissipation of 57 W. The device is AEC-Q101 qualified and includes avalanche testing.

Single FETs, MOSFETs Feature Summary

• OptiMOS-T technology optimized for automotive environments
• AEC-Q101 qualification ensuring reliability standards
• High thermal stability with 175°C operating capability
• Robust avalanche energy handling

Single FETs, MOSFETs Applications

• Automotive power switching circuits
• Low-side load switching applications
• DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against the official Infineon datasheet to confirm tape-and-reel packaging details. Confirm that the component meets the required AEC-Q101 grade specifications for your target automotive application before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 120 V rating is required instead of standard 100 V options. Ensure gate drive voltages align with the specified threshold characteristics. Verify PCB footprint compatibility with the PG-TO252-3-11 package dimensions during the design phase.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-T family, representing advanced silicon MOSFET technology from Infineon Technologies. It is engineered specifically for high-reliability automotive electronics, offering improved performance metrics compared to previous generations while maintaining industry-standard packaging formats.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same OptiMOS-T series if supply constraints exist. Ensure any substitute maintains the 120 V rating and similar RDS(on) values to preserve circuit efficiency.