IPDQ60R025CFD7XTMA1

$10.29

Description：HIGH POWER_NEW
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7c6d9900e3c2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPDQ60R025CFD7XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is HIGH POWER_NEW. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPDQ60R025CFD7XTMA1

Description：HIGH POWER_NEW
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：25mOhm @ 32.6A, 10V
Vgs(th) (Max) @ Id：4.5V @ 1.63mA
Gate Charge (Qg) (Max) @ Vgs：141 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5626 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：446W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-HDSOP-22-1
Package / Case：22-PowerBSOP Module

Single FETs, MOSFETs datasheet and documents for IPDQ60R025CFD7XTMA1

IPDQ60R025CFD7XTMA1

Single FETs, MOSFETs Overview

The IPDQ60R025CFD7XTMA1 is a 600V CoolMOS CFD7 power transistor in a PG-HDSOP-22 package. It features a maximum drain-source voltage of 650V and a typical gate charge of 141nC. The device supports a pulsed drain current of 277A and an effective output capacitance energy (Eoss) of 16.3µJ at 400V. Its reverse diode withstands a commutation speed of 1300A/µs.

Single FETs, MOSFETs Feature Summary

Optimized for soft-switching topologies like phase-shift full-bridge and LLC converters
Features ultra-fast body diode with best-in-class reverse recovery charge
Provides improved MOSFET reverse diode dv/dt and diF/dt ruggedness
Delivers lowest figure-of-merit RDS(on)*Qg and RDS(on)*Eoss

Single FETs, MOSFETs Applications

Phase-shift full-bridge (ZVS) applications
LLC resonant converter applications
Server and telecom power supplies
EV charging systems

Single FETs, MOSFETs Procurement Notes

Verify the specific XTMA1 suffix against official Infineon documentation to confirm packaging details. Ensure the ordering code matches the exact PG-HDSOP-22 variant required for your design. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency resonant topologies requiring superior hard commutation ruggedness. The optimized platform balances performance with ease of implementation. Consider the low gate charge and fast switching characteristics when designing drivers for server, telecom, or EV charging environments.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS CFD7 series, succeeding the CFD2 platform. It utilizes superjunction technology tailored for soft-switching applications. The product is fully qualified according to JEDEC standards for industrial applications, ensuring reliability in demanding power conversion scenarios.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Do not assume compatibility based on generic package or voltage ratings alone. Verify thermal resistance and pinout configurations carefully before swapping components.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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