IPI80P03P4L04AKSA1

Single FETs, MOSFETs Overview

The IPI80P03P4L-04 is a P-channel OptiMOS-P2 power transistor in the PG-TO262-3-1 package. It features a -30V drain-source voltage and an -80A continuous drain current at 25°C case temperature. The device has a maximum on-state resistance of 7mΩ at VGS=-4.5V and 4.4mΩ at VGS=-10V. It supports a pulsed drain current of -320A, handles single-pulse avalanche energy of 410mJ, and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Logic-level enhancement mode operation for direct drive compatibility
• Automotive qualification compliant with AEC standards
• High thermal robustness with 175°C operating capability
• Validated avalanche energy handling for rugged applications

Single FETs, MOSFETs Applications

• Reverse battery protection circuits
• Low-side switching in automotive systems
• Power management modules requiring logic-level control

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm the exact package variant and marking code. Ensure that the procurement channel provides traceability to the manufacturer's original production records. Confirm RoHS compliance status and moisture sensitivity level requirements prior to finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with high current capacity and low on-resistance is required for automotive environments. Consider the PG-TO262-3-1 package dimensions for PCB layout constraints. Evaluate the gate threshold voltage characteristics to ensure compatibility with the intended logic-level driver signals.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-P2 family from Infineon Technologies, designed for robust power switching applications. It shares technical similarities with the IPB80P03P4L-04 and IPP80P03P4L-04 models, differing primarily in the physical package configuration while maintaining identical electrical performance specifications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IPB80P03P4L-04 (PG-TO263-3-2) and IPP80P03P4L-04 (PG-TO220-3-1). Verify mechanical footprint compatibility before substitution.