IQE050N08NM5ATMA1

Single FETs, MOSFETs Overview

The IQE050N08NM5ATMA1 is an N-channel Power MOSFET from Infineon Technologies' OptiMOS™ series, housed in a PG-TSON-8-4 surface-mount package. It features an 80 V drain-source voltage rating and a continuous drain current of 16 A at ambient temperature (Ta) or 101 A at case temperature (Tc). The device exhibits a maximum on-resistance of 5 mΩ at Vgs = 10 V and Id = 20 A. Key electrical parameters include a gate charge of 43.2 nC at 10 V, input capacitance of 2900 pF at 40 V, and a threshold voltage up to 3.8 V at 49 µA. Thermal performance specifies power dissipation of 2.5 W at Ta and 100 W at Tc, with an operating junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• OptiMOS™ technology providing low conduction losses and optimized switching characteristics for high-efficiency power applications.
• PG-TSON-8-4 package design enabling efficient thermal management through direct copper bonding capabilities.
• Enhanced ruggedness and reliability suitable for demanding industrial and automotive environments.

Single FETs, MOSFETs Applications

• Synchronous rectification in DC/DC converters
• Motor control circuits
• Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material content declarations via the manufacturer's certificate before integration into regulated assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when an 80 V N-channel MOSFET with low Rds(on) is required in a compact surface-mount form factor. Evaluate thermal resistance requirements based on the specific PCB copper area available for heat dissipation, as the PG-TSON package relies heavily on board-level cooling for optimal performance.

Single FETs, MOSFETs Part Context

This device belongs to the IQE050N family of OptiMOS™ power transistors designed for high-density power conversion. It complements other Infineon MOSFETs by offering a balance of low on-resistance and small footprint, targeting applications where space constraints and thermal efficiency are critical design drivers.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with IQE050N08NM5 variants for potential pin-compatible alternatives. Verify that any substitute maintains identical voltage ratings, current handling capabilities, and package dimensions to ensure circuit compatibility without redesign.