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IR1169STRPBF is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR LOW-SIDE 8SOIC. Review the specifications below when checking this part for your BOM.
The IR1169STRPBF is a low-side gate driver IC manufactured by Infineon Technologies, designed for advanced smart rectifier applications. It operates within a supply voltage range of 10.7V to 200V and features an inverting logic configuration. The device utilizes an 8-SOIC surface-mount package and supports CMOS and TTL input logic levels. Key electrical characteristics include a propagation delay of approximately 70ns, making it suitable for high-speed switching operations in power electronics systems requiring efficient rectification control.
Verify component authenticity through authorized Infineon distributors or certified partners. Confirm RoHS compliance status and moisture sensitivity level prior to soldering. Ensure storage conditions meet JEDC standards to prevent humidity damage. Cross-reference datasheet revisions to confirm pinout and electrical specifications match design requirements before procurement.
Select this component when inverting low-side drive capability is required for smart rectifier implementations. Evaluate the 70ns propagation delay against switching frequency requirements. Consider the 8-SOIC package constraints for thermal management and PCB layout. Compare input logic compatibility with existing microcontroller or DSP output levels to ensure signal integrity without additional interface circuitry.
This part belongs to Infineon's gate driver family, specifically targeting smart rectifier applications. It complements other high-side and half-bridge drivers by providing dedicated low-side control. The STRPBF suffix indicates tape-and-reel packaging for automated assembly processes, aligning with mass production requirements for consumer and industrial power electronics.
It is a low-side gate driver with an inverting output configuration.
The propagation delay is specified as approximately 70ns.
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