IR2125S

Gate Driver Overview

The IR2125S is a high-voltage, high-speed power MOSFET and IGBT driver featuring over-current limiting protection. It operates with a supply voltage range of 0V to 18V and supports logic levels of 0.8V (VIL) and 2.2V (VIH). The device provides a source current of 1.6 A and a sink current of 3.3 A. Propagation delays are specified at 170 ns for turn-on and 200 ns for turn-off. It functions within an operating temperature range of -40°C to +125°C and utilizes a 16-lead SOICWB package.

Gate Driver Feature Summary

• Integrates over-current limiting protection circuitry for enhanced system reliability.
• Provides functional level-shift isolation via junction isolation technology.
• Supports direct drive for IGBTs and N-channel MOSFETs in high-side configurations.

Gate Driver Applications

• Industrial motor drives
• High-voltage power supplies
• Inverter circuits

Gate Driver Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm pinout compatibility and thermal characteristics. Ensure the selected variant matches the required package type and voltage ratings for the target application design.

Gate Driver Selection Notes

Select this component for applications requiring robust high-side driving capabilities with integrated fault protection. Consider the 500 V voltage rating and current sourcing/sinking limits when designing the gate drive circuit for power switches.

Gate Driver Part Context

The IR2125S belongs to the EiceDRIVER family of high-voltage gate drivers. It is designed to interface low-voltage control signals with high-power switching devices, offering a compact solution for industrial and automotive power electronics.

Gate Driver Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference electrical parameters such as UVLO thresholds and propagation delay times to ensure functional equivalence in existing designs.