IRF6629TR1PBF

Description：MOSFET N-CH 25V 29A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:599956803ab9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF6629TR1PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 29A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF6629TR1PBF

Description：MOSFET N-CH 25V 29A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：29A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id：2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4260 pF @ 13 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 100W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DIRECTFET™ MX
Package / Case：DirectFET™ Isometric MX

Single FETs, MOSFETs datasheet and documents for IRF6629TR1PBF

IRF6629TR1PBF

Single FETs, MOSFETs Overview

The IRF6629TR1PBF is a single N-channel HEXFET power MOSFET utilizing DirectFET packaging. It features a drain-to-source voltage of 25 V and a continuous drain current of 23 A at 25°C case temperature. The device exhibits a maximum on-resistance of 2.1 mΩ at 10 V gate drive and 2.7 mΩ at 4.5 V. Total gate charge is typically 34 nC, with a threshold voltage ranging from 1.35 V to 2.35 V. Thermal resistance junction-to-case is 1.2 °C/W maximum.

Single FETs, MOSFETs Feature Summary

Combines advanced silicon technology with low-profile DirectFET packaging for high thermal transfer efficiency.
Optimized for synchronous buck applications with ultra-low package inductance and high Cdv/dt turn-on immunity.
Compatible with standard surface mount assembly techniques including vapor phase and convection soldering.

Single FETs, MOSFETs Applications

High-efficiency DC-DC converters
Processor core power supplies
Synchronous rectification circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR1PBF against official manufacturer documentation to confirm reel quantity and tape specifications. Ensure compliance with RoHS standards and lead-free qualification requirements prior to procurement. Confirm component availability status as market conditions may affect supply continuity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low profile and dual-sided cooling capabilities. Evaluate thermal management strategies based on the specified junction-to-case resistance. Verify that the gate drive voltage meets the minimum requirements for optimal on-resistance performance in the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the DirectFET family, designed to balance low resistance and low charge. It utilizes a footprint compatible with SO-8 layouts while offering superior thermal performance compared to traditional packages. The technology targets mass market applications demanding high power density.