IRF7342D2PBF

Description：MOSFET P-CH 55V 3.4A 8SO
Series：FETKY™
Mfr：Infineon Technologies
Package：Tube

SKU:a165bdc47ae8 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF7342D2PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 55V 3.4A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF7342D2PBF

Description：MOSFET P-CH 55V 3.4A 8SO
Series：FETKY™
Mfr：Infineon Technologies
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：690 pF @ 25 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for IRF7342D2PBF

IRF7342D2PBF

Single FETs, MOSFETs Overview

The IRF7342D2PBF is a dual P-channel power MOSFET from Infineon Technologies, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 55 V and a continuous drain current (Id) of 3.4 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 105 mΩ. Key switching parameters include a gate charge (Qg) of 26 nC, with typical turn-on and turn-off delays of 14 ns and 43 ns, respectively. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 2 W.

Single FETs, MOSFETs Feature Summary

Dual P-channel configuration for efficient half-bridge or synchronous rectification applications
Low on-resistance optimized for high-efficiency power switching
Robust avalanche capability for improved reliability in inductive loads

Single FETs, MOSFETs Applications

Buck regulators
Synchronous rectification circuits
DC/DC converter modules

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status of this component before design finalization. Confirm availability through authorized distributors or secondary markets. Ensure replacement strategies are documented if supply chain continuity is required for long-term production.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, medium-current applications requiring dual P-channel isolation. Compare Rds(on) and Qg values against alternatives to ensure compatibility with specific switching frequency requirements and thermal management constraints.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon. It is designed for general-purpose power switching applications where compact packaging and moderate current handling are prioritized. The SOIC-8 package provides a balance between thermal performance and board space efficiency.