IRF740PBF-BE3

$1.33

Description：MOSFET N-CH 400V 10A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:5b6355207143 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF740PBF-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 400V 10A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF740PBF-BE3

Description：MOSFET N-CH 400V 10A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：400 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：550mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF740PBF-BE3

IRF740PBF-BE3

Single FETs, MOSFETs Overview

The IRF740PBF-BE3 is a Vishay Siliconix third-generation N-channel power MOSFET housed in a TO-220AB package. It features a 400 V drain-source voltage rating and a maximum continuous drain current of 10 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.55 Ω at VGS = 10 V and Id = 6.0 A. Key dynamic parameters include a total gate charge of 63 nC, turn-on delay time of 14 ns, rise time of 27 ns, turn-off delay time of 50 ns, and fall time of 24 ns. Maximum power dissipation is 125 W at 25 °C.

Single FETs, MOSFETs Feature Summary

Dynamic dV/dt rating for high-speed switching applications
Repetitive avalanche rated capability for ruggedized operation
Fast switching characteristics with low gate charge
Ease of paralleling for higher current configurations

Single FETs, MOSFETs Applications

Switch-mode power supplies
DC-to-AC inverters
H-bridge PWM motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance requirements. The BE3 suffix indicates lead-free and halogen-free construction. Confirm RoHS compliance status directly from the manufacturer's datasheet or official component documentation before procurement. Ensure the TO-220AB package type matches the intended thermal management design.

Single FETs, MOSFETs Selection Notes

Select this component for commercial-industrial applications requiring moderate power dissipation levels around 50 W. The TO-220AB package offers low thermal resistance and cost-effectiveness. Evaluate the 0.55 Ω on-resistance against system efficiency targets. Consider the 400 V breakdown voltage for appropriate circuit protection margins.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix IRF series of third-generation power MOSFETs. These devices are designed to provide an optimal combination of fast switching speed, ruggedized device design, and low on-resistance. The product line utilizes advanced silicon technology to enhance performance while maintaining cost-effectiveness for widespread industrial use.