IRF7465TRPBFXTMA1

Single FETs, MOSFETs Overview

The IRF7465TRPBFXTMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It is housed in an SO-8 surface-mount package and rated for a maximum drain-source voltage of 150 V. The device supports a continuous drain current of 1.9 A at 25°C ambient temperature with a total power dissipation of 2.5 W. Key electrical characteristics include a maximum on-state resistance of 280 mΩ at 10 V gate drive, a typical gate charge of 10 nC at 10 V, and a gate-drain charge of 5 nC. The component operates within a junction temperature range up to 150 °C and features a thermal resistance from junction to ambient of 50 K/W.

Single FETs, MOSFETs Feature Summary

• OptiMOS technology integration for optimized switching performance
• Logic-level gate threshold voltage enabling direct drive from standard logic interfaces
• SO-8 surface-mount packaging designed for automated assembly processes

Single FETs, MOSFETs Applications

• Motor control circuits
• Switch-mode power supplies (SMPS)
• High-side and low-side load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix XTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and manufacturing lot details. Ensure compatibility with RoHS standards and lead-free requirements as indicated in public product identification reports. Cross-reference the full part number with authorized distributors to validate current production status and availability constraints prior to procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 150 V rating is required for high-voltage switching applications. The 280 mΩ on-resistance suits moderate current loads around 1.9 A. Consider the SO-8 package for board space efficiency. Evaluate the gate charge parameters against the driving circuit capabilities to ensure adequate switching speeds without excessive driver stress.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS family of power MOSFETs, which are engineered for efficient power conversion and management. The IRF7465 variant specifically targets applications requiring robust high-voltage handling in a compact footprint. It complements other devices in the series by offering a balance between voltage blocking capability and conduction losses suitable for general-purpose industrial and consumer electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Potential alternatives may include other 150 V N-channel MOSFETs in SO-8 packages with comparable Rds(on) and current ratings. Verify pinout compatibility and thermal characteristics before substitution.