IRFD110

Description：MOSFET N-CH 100V 1A 4DIP
Series：-
Mfr：Vishay Siliconix
Package：Bulk

SKU:fe126b80101c Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFD110 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 1A 4DIP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFD110

Description：MOSFET N-CH 100V 1A 4DIP
Series：-
Mfr：Vishay Siliconix
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：540mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：180 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：4-HVMDIP
Package / Case：4-DIP (0.300", 7.62mm)

Single FETs, MOSFETs datasheet and documents for IRFD110

IRFD110

Single FETs, MOSFETs Overview

The IRFD110 is a third-generation N-channel power MOSFET from Vishay Siliconix, housed in a four-pin HVMDIP package. It features a drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 1.0 A at 25 °C. The device exhibits a maximum on-resistance (RDS(on)) of 0.54 Ω at VGS = 10 V and a total gate charge (Qg) of 8.3 nC. It supports an operating junction temperature range of -55 °C to +175 °C, with a maximum power dissipation of 1.3 W at 25 °C ambient.

Single FETs, MOSFETs Feature Summary

Repetitive avalanche rated for ruggedized operation
Dynamic dV/dt rating for fast switching applications
Low cost machine-insertable case style suitable for automatic insertion
End stackable design allowing multiple combinations on standard pin centers

Single FETs, MOSFETs Applications

Switching regulators
Motor drivers
Relay drivers
High-power bipolar transistor drivers requiring fast switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm lead-free status and compliance requirements. Confirm that the HVMDIP package dimensions align with the target PCB footprint and thermal management strategy. Ensure the selected component meets the required repetitive avalanche energy ratings for the intended application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a low-cost, through-hole N-channel MOSFET with high-voltage capability is required. The HVMDIP package facilitates easy stacking and manual or automated assembly. Consider the 0.54 Ω on-resistance and 1.0 A current limit for moderate power switching tasks where space constraints allow for larger packages compared to surface-mount alternatives.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix third-generation power MOSFET family, designed to balance fast switching speeds with low on-resistance. The IRFD110 specifically utilizes the HVMDIP package, which provides a dual-drain configuration to serve as a thermal link to the mounting surface, enhancing heat dissipation capabilities up to 1 W.