IRFD9210

Single FETs, MOSFETs Overview

The IRFD9210 is a P-channel power MOSFET from Vishay Siliconix, housed in an HVMDIP-4 package. It features a drain-source voltage of -200 V and a maximum on-state resistance of 3.0 Ω at VGS = -10 V. The device supports a continuous drain current of -0.40 A at 25 °C and handles pulsed currents up to -3.2 A. Total gate charge is typically 8.9 nC, with turn-on delay at 8.0 ns. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Repetitive avalanche rated for robust operation under inductive switching conditions
• Dynamic dV/dt rating ensures stability during fast body diode recovery events
• HVMDIP package design enables automatic insertion and end stacking on standard pin centers

Single FETs, MOSFETs Applications

• High-voltage direct current (HVDC) power supply circuits
• Motor control systems requiring high-side or low-side P-channel switching
• Industrial automation equipment utilizing machine-insertable components

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number refers to leaded construction, while the PbF suffix indicates lead-free compliance. Confirm RoHS status and material categorization details directly with the manufacturer or authorized distributors prior to procurement to ensure alignment with project environmental requirements.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding high-voltage isolation in through-hole designs. The dual-drain configuration facilitates efficient thermal dissipation via mounting surfaces. Ensure drive circuitry accommodates the specified gate-source voltage limits and threshold characteristics for reliable switching performance across the full operating temperature range.

Single FETs, MOSFETs Part Context

This device belongs to Vishay's advanced line of power MOSFET transistors, leveraging efficient geometry for low on-resistance and high ruggedness. The HVMDIP package provides a cost-effective, machine-insertable solution suitable for high-voltage applications where thermal management and automated assembly are critical design factors.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for qualified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the host circuit board.