IRFH7004TRPBF

$1.06

Description：MOSFET N-CH 40V 100A 8PQFN
Series：HEXFET®, StrongIRFET™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2fe4b1864a9e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFH7004TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 100A 8PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFH7004TRPBF

Description：MOSFET N-CH 40V 100A 8PQFN
Series：HEXFET®, StrongIRFET™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：194 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6419 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：156W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PQFN (5x6)
Package / Case：8-VQFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for IRFH7004TRPBF

IRFH7004TRPBF

Single FETs, MOSFETs Overview

The IRFH7004TRPBF is a single N-channel Power MOSFET from the HEXFET G1 family, housed in a PQFN 5x6 mm surface-mount package. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 100A limited by the package. The device exhibits a typical on-resistance of 1.1mΩ with a maximum of 1.4mΩ at VGS=10V. Key dynamic parameters include a total gate charge of 129nC, an internal gate resistance of 2.4Ω, and a forward transconductance of 117S. Thermal performance includes a junction-to-case thermal resistance of 0.8°C/W maximum.

Single FETs, MOSFETs Feature Summary

Enhanced ruggedness through improved gate, avalanche, and dynamic dV/dt capabilities
Fully characterized capacitance and avalanche safe operating area (SOA)
Improved body diode dv/dt and di/dt recovery characteristics
RoHS compliant construction containing no lead, bromide, or halogen

Single FETs, MOSFETs Applications

Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against Infineon Technologies specifications before integration. Confirm that the PQFN 5x6 mm package dimensions align with the target PCB footprint. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance limits under expected load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses within a 40V system architecture. Evaluate the 100A package-limited current rating against peak operational demands. Consider the enhanced avalanche energy handling for inductive load switching scenarios where transient overvoltages may occur.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET G1 series of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology optimized for high-current density and efficient thermal dissipation. The PQFN 5x6 mm package provides a compact form factor suitable for dense surface-mount assembly while maintaining robust electrical performance standards.