IRFH7440TR2PBF

$1.67

Description：MOSFET N-CH 40V 85A 8PQFN
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)

SKU:a08094577327 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFH7440TR2PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 85A 8PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFH7440TR2PBF

Description：MOSFET N-CH 40V 85A 8PQFN
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：138 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：4574 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PQFN (5x6)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IRFH7440TR2PBF

IRFH7440TR2PBF

Single FETs, MOSFETs Overview

The IRFH7440TR2PbF is a single N-channel StrongIRFET power MOSFET in a PQFN 5x6 mm package. It features a maximum drain-source voltage of 40 V and a typical on-resistance of 1.8 mΩ (max 2.4 mΩ at VGS=10V). The device supports a continuous drain current of 159 A at 25°C case temperature and handles a pulsed current of 636 A. Total gate charge is typically 92 nC, with a junction-to-case thermal resistance of 1.2 °C/W. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche safe operating area
Enhanced body diode dV/dt and dI/dt capability

Single FETs, MOSFETs Applications

Brushed motor drive applications
BLDC motor drive applications
PWM inverterized topologies
Battery powered circuits
Half-bridge and full-bridge topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR2PbF against official Infineon documentation to confirm packaging quantity and status. The datasheet indicates this mini-reel option has an End-of-Life notice. Ensure compliance with RoHS standards and industrial qualification levels before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-current low-voltage switching where compact surface-mount footprint is required. Consider the 1.8 mΩ typical RDS(on) for conduction loss optimization. Evaluate thermal management requirements given the 159 A rating and 1.2 °C/W junction-to-case resistance.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET family, designed for robust performance in demanding power conversion environments. It utilizes HEXFET technology to deliver high power density within the small PQFN 5x6 mm package, suitable for modern electronic designs requiring efficient space utilization.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute matches the 40V rating and similar on-resistance characteristics. Confirm package dimensions align with existing PCB footprints.