IRFI820GPBF

$1.02

Description：MOSFET N-CH 500V 2.1A TO220-3
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:9a6e6a8ef1e4 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFI820GPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 2.1A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFI820GPBF

Description：MOSFET N-CH 500V 2.1A TO220-3
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3 Full Pack, Isolated Tab

Single FETs, MOSFETs datasheet and documents for IRFI820GPBF

IRFI820GPBF

Single FETs, MOSFETs Overview

The IRFI820GPBF is a Vishay Siliconix third-generation N-Channel Power MOSFET housed in an isolated TO-220 FULLPAK package. It features a drain-source voltage (VDS) of 500 V and a continuous drain current (ID) of 2.1 A at 25 °C case temperature. The maximum on-state resistance (RDS(on)) is 3.0 Ω at VGS = 10 V. Key dynamic parameters include a total gate charge (Qg) of 24 nC, input capacitance (Ciss) of 360 pF, and a peak diode recovery dV/dt rating of 3.5 V/ns. The device supports a single pulse avalanche energy (EAS) of 110 mJ and operates within a junction temperature range of -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

Isolated package design providing high voltage isolation capability equivalent to a standard mica barrier without requiring additional insulating hardware.
High voltage isolation rated at 2.5 kV RMS for 60 seconds at 60 Hz frequency.
Dynamic dV/dt rating ensures robust performance against rapid voltage transients during switching operations.

Single FETs, MOSFETs Applications

Commercial-industrial applications requiring high-voltage isolation
Switching power supplies
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'PbF' confirms lead-free compliance as documented in the manufacturer's datasheet. Confirm that the TO-220 FULLPAK package dimensions match your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-case thermal resistance ratings under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation is required without separate insulating materials. The TO-220 FULLPAK simplifies mounting by eliminating extra hardware. Evaluate the 3.0 Ω RDS(on) against system efficiency needs. Verify that the 2.1 A continuous current rating meets load requirements at the intended case temperature.

Single FETs, MOSFETs Part Context

This part belongs to the IRFI series of high-voltage power MOSFETs from Vishay Siliconix. It utilizes third-generation technology to balance fast switching speeds with ruggedized device design. The product line targets applications needing reliable isolation and low thermal resistance in a single package form factor.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for qualified alternatives. Cross-referencing requires matching voltage, current, and isolation specifications precisely.