IRFP4227PBFXKMA1

Single FETs, MOSFETs Overview

The IRFP4227PBFXKMA1 is an N-channel enhancement mode power MOSFET from Infineon Technologies, belonging to the StrongIRFET family. It features a 200 V drain-source voltage rating and supports a continuous drain current of 65 A at 25°C. The device utilizes a TO-247 package for through-hole mounting. Key electrical parameters include a maximum on-resistance of 25 mΩ at 10 V gate drive, a typical total gate charge of 70 nC, and a thermal resistance from junction to case of 0.45 K/W. The component operates within a temperature range of -40°C to +175°C.

Single FETs, MOSFETs Feature Summary

• StrongIRFET technology providing low on-resistance and high switching efficiency
• High thermal performance with low junction-to-case thermal resistance
• Robust avalanche capability for reliable operation in inductive loads

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control applications
• Power factor correction circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix PBFXKMA1 against official Infineon documentation to confirm lead-free compliance and tape-and-reel packaging specifications. Ensure the ordering part number matches the required package variant and environmental certifications before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling at 200 V with efficient thermal dissipation. Evaluate the 25 mΩ on-resistance against system conduction loss requirements. Confirm that the gate charge characteristics align with the driving circuit capabilities for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET series, representing advanced planar trench technology from Infineon. It serves as a leaded, through-hole alternative to surface-mount variants, facilitating integration into industrial and automotive systems where robust mechanical mounting and high power density are essential.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference data for verified substitutes. Do not assume functional equivalence with generic N-channel MOSFETs based solely on voltage and current ratings.