IRFR3410TRPBF

$0.48

Description：MOSFET N-CH 100V 31A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d95ab7c53931 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFR3410TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 31A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR3410TRPBF

Description：MOSFET N-CH 100V 31A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：39mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1690 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR3410TRPBF

IRFR3410TRPBF

Single FETs, MOSFETs Overview

The IRFR3410TRPBF is an N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252) surface-mount package and supports a drain-source voltage of 100V with a continuous drain current of 31A at a case temperature of 25°C. The device exhibits a maximum on-resistance of 39mΩ at VGS=10V and ID=18A, alongside a total gate charge of 37nC typical. It operates within a junction temperature range of -55°C to +175°C and provides a single-pulse avalanche energy rating of 140mJ.

Single FETs, MOSFETs Feature Summary

Low gate-to-drain charge designed to reduce switching losses in high-frequency applications
Fully characterized capacitance including effective output capacitance to simplify circuit design
Fully characterized avalanche voltage and current ratings for robust operation under transient conditions

Single FETs, MOSFETs Applications

High frequency DC-DC converters
Industrial motor drives
Power supply circuits requiring low standby current

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and reel specifications. Confirm that the component meets RoHS standards if required by your manufacturing process. Ensure the procurement channel sources directly from authorized distributors or verified suppliers to guarantee authenticity and traceability of the Infineon product.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 100V rated N-channel MOSFET with optimized switching performance. The low gate charge makes it suitable for high-frequency topologies where minimizing switching loss is critical. Consider the thermal resistance characteristics and ensure adequate PCB copper area is allocated for heat dissipation to maintain safe operating temperatures during continuous conduction.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology and is housed in a D-Pak (TO-252) surface-mount package. The device is intended for industrial market applications and is fully characterized for both static and dynamic electrical parameters, ensuring reliability in demanding power conversion environments.