IRFR3708TR

Single FETs, MOSFETs Overview

The IRFR3708TR is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in a D-Pak (TO-252) surface-mount package. It features a 30V drain-source voltage rating and supports a continuous drain current of 61A at 25°C case temperature. The device exhibits an ultra-low on-resistance of 12.5mΩ maximum at VGS=10V and 14.0mΩ maximum at VGS=4.5V. Key dynamic characteristics include a total gate charge of 24nC and a Miller charge of 5.8nC. It offers a high pulsed drain current capability of 244A and a single-pulse avalanche energy rating of 213mJ. Thermal resistance from junction to case is 1.73°C/W, with an operating junction temperature range spanning -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Ultra-low gate impedance designed for efficient switching performance
• Very low RDS(on) maintained even at reduced gate drive voltages
• Fully characterized avalanche voltage and current capabilities

Single FETs, MOSFETs Applications

• High frequency DC-DC isolated converters for telecom and industrial use
• High frequency buck converters for computer processor power supplies
• Synchronous rectification circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and tape-and-reel packaging configuration. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the procurement channel provides valid traceability data. Check for any obsolescence notices or lifecycle status updates directly from Infineon Technologies before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring robust handling of inductive load transients due to its high avalanche energy rating. The low gate charge makes it suitable for high-frequency applications where minimizing driver losses is critical. Evaluate thermal management strategies carefully, as the D-Pak package requires adequate PCB copper area to maintain safe junction temperatures under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, representing a generation of silicon devices optimized for high-speed switching. The IRFR3708 series utilizes planar strip technology to achieve low on-resistance within a standard TO-252 footprint. It serves as a discrete solution for power stages in various switching regulator topologies.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 30V VDS rating, D-Pak package dimensions, and thermal resistance specifications. Verify that alternative components offer comparable avalanche energy ratings if used in inductive environments.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse avalanche energy rating?

The IRFR3708TR has a maximum single-pulse avalanche energy rating of 213mJ.

How does the on-resistance vary with gate voltage?

The maximum on-resistance is 12.5mΩ at VGS=10V and increases to 14.0mΩ maximum at VGS=4.5V.