Single FETs, MOSFETs IRFS31N20DPBF product image

IRFS31N20DPBF

  • Description:MOSFET N-CH 200V 31A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:d193a4ab620b Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

IRFS31N20DPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 31A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFS31N20DPBF

  • Description:MOSFET N-CH 200V 31A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:82mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id:5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2370 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta), 200W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRFS31N20DPBF

IRFS31N20DPBF

Single FETs, MOSFETs Overview

The IRFS31N20DPbF is a single N-channel HEXFET power MOSFET in a D2-Pak (TO-263) package. It features a maximum drain-source voltage of 200V, a continuous drain current of 31A at 25°C case temperature, and a maximum on-resistance of 82mΩ at VGS=10V. The device has a total gate charge of 70nC typical, a junction-to-case thermal resistance of 0.75°C/W, and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Low gate-to-drain charge reduces switching losses
  • Fully characterized avalanche voltage and current ratings
  • Lead-free packaging compliant with RoHS standards

Single FETs, MOSFETs Applications

  • High frequency DC-DC converters
  • Telecom 48V input DC/DC active clamp reset forward converter

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact part number IRFS31N20DPbF. Confirm the package type is D2-Pak (TO-263). Ensure the datasheet specifications align with your circuit requirements for voltage, current, and thermal management. Check for lead-free compliance if required by your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 200V N-channel MOSFET with moderate current handling capabilities. Consider the 82mΩ on-resistance for conduction loss calculations. Evaluate the thermal performance based on the 0.75°C/W junction-to-case resistance and the specific PCB layout or heatsinking conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies (formerly International Rectifier). It is designed for general-purpose power switching applications where high reliability and low switching losses are important. The D2-Pak package offers a balance between performance and ease of mounting.

Single FETs, MOSFETs Replacement Considerations

IRFB31N20DPbF (TO-220AB package), IRLS31N20DPbF (TO-262 package)

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 124A.

Is the body diode reverse recovery time specified?

Yes, the typical reverse recovery time is 200ns and the maximum is 300ns at TJ=25°C, IF=18A, and di/dt=100A/µs.

IRFS31N20DPBFIRFS31N20DPBF

Click on the inquiry

Recent News