Single FETs, MOSFETs IRFS3206TRRPBF product image

IRFS3206TRRPBF

$3.26
  • Description:MOSFET N-CH 60V 120A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:677902f5d776 Category: Brand:

  
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IRFS3206TRRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 120A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFS3206TRRPBF

  • Description:MOSFET N-CH 60V 120A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6540 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):300W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRFS3206TRRPBF

IRFS3206TRRPBF

Single FETs, MOSFETs Overview

The IRFS3206TRRPBF is a single N-channel HEXFET power MOSFET in the D2PAK (TO-263) surface-mount package. It features a maximum drain-source voltage of 60 V and a typical on-resistance of 2.4 mΩ, with a maximum rating of 3.0 mΩ at VGS = 10V. The device supports a silicon-limited continuous drain current of 210 A and a package-limited current of 120 A. Key dynamic parameters include a total gate charge of 120 nC (typical) and a forward transconductance of 210 S. It operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • Enhanced ruggedness for gate drive, avalanche events, and dynamic dv/dt conditions.
  • Fully characterized capacitance and safe operating area (SOA) for avalanche performance.
  • Improved body diode capabilities regarding dv/dt and di/dt stress.
  • Lead-free construction compliant with RoHS standards.

Single FETs, MOSFETs Applications

  • High efficiency synchronous rectification in switch-mode power supplies (SMPS)
  • Uninterruptible power supply (UPS) systems
  • High speed power switching circuits
  • Hard switched and high frequency applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TRRPBF confirms tape and reel packaging with right feed direction. Confirm the component meets industrial qualification standards per JEDEC JESD47F guidelines. Ensure the selected variant aligns with required moisture sensitivity level 1 handling procedures during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical due to its ultra-low on-resistance. Consider the 210 A silicon limit versus the 120 A package limit based on thermal management design. Evaluate the enhanced avalanche energy ratings if the application involves inductive load switching or unclamped inductive scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It shares core electrical characteristics with other variants such as the IRFB3206PbF and IRFSL3206PbF, which utilize TO-220AB and TO-262 packages respectively. The TRRPBF designation specifically indicates the surface-mount D2PAK form factor supplied in tape and reel.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible alternatives within the same series include IRFS3206PbF and IRFS3206TRLpbf. Verify that any substitute maintains the identical D2PAK footprint and matches the 60V/210A electrical ratings.

IRFS3206TRRPBFIRFS3206TRRPBF
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