IRFS4010-7PPBF

Single FETs, MOSFETs Overview

The IRFS4010-7PPbF is a single N-channel HEXFET power MOSFET housed in a D2Pak-7 (TO-263) lead-free package. It features a maximum drain-to-source voltage of 100V and a continuous drain current rating of 190A at 25°C case temperature. The device exhibits a typical on-resistance of 3.3mΩ, with a maximum specification of 4.0mΩ at VGS=10V. Key dynamic parameters include a total gate charge of 150nC and a Miller charge of 48nC. Thermal performance is defined by a junction-to-case resistance of 0.40°C/W, supporting operation within a -55°C to +175°C junction temperature range.

Single FETs, MOSFETs Feature Summary

• Enhanced body diode dV/dt and dI/dt capability for improved synchronous rectification performance
• Fully characterized capacitance and avalanche safe operating area (SOA)
• Improved ruggedness regarding gate integrity, avalanche tolerance, and dynamic dv/dt

Single FETs, MOSFETs Applications

• High efficiency synchronous rectification in switch-mode power supplies (SMPS)
• Uninterruptible power supply (UPS) systems
• Hard switched and high frequency power circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7P' against official Infineon documentation to confirm package variant and tape-and-reel specifications. Ensure that the component meets industrial market qualification standards as stated in the datasheet. Confirm compliance with RoHS directives and verify that the part is suitable for the intended thermal management environment given its 0.40 K/W junction-to-case resistance rating.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust switching performance at 100V with high current handling capabilities up to 190A. The low on-resistance minimizes conduction losses, while the enhanced body diode characteristics support efficient synchronous rectification topologies. Consider the thermal constraints imposed by the D2Pak-7 package and ensure adequate PCB copper area or heatsinking to maintain junction temperatures within the specified 175°C limit during peak load operations.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes standard silicon planar technology optimized for high-speed switching and low on-state resistance. The D2Pak-7 package provides a balance between electrical performance and mechanical mounting flexibility, making it suitable for surface-mount assembly on printed circuit boards designed for high-power density applications.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains equivalent voltage ratings, current capabilities, and package dimensions to fit existing footprints without redesigning the thermal interface.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The datasheet specifies a thermally limited single pulse avalanche energy (EAS) of 300 mJ when starting from a junction temperature of 25°C.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage decreases as temperature increases, exhibiting a negative temperature coefficient across the operating range of -55°C to +175°C.