IRFS4410PBF

Single FETs, MOSFETs Overview

The IRFS4410PBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D2PAK (TO-263) surface-mount package and operates with a drain-source breakdown voltage of 100V. The device supports a continuous drain current of 88A at a case temperature of 25°C, with a maximum pulsed drain current of 380A. Its static drain-to-source on-resistance is typically 8.0mΩ and has a maximum rating of 10mΩ when measured at a gate-source voltage of 10V. Total gate charge is specified at 120nC typical and 180nC maximum.

Single FETs, MOSFETs Feature Summary

• Enhanced body diode dV/dt and dI/dt capability for improved switching performance
• Fully characterized capacitance and avalanche safe operating area
• Improved ruggedness regarding gate, avalanche, and dynamic dV/dt characteristics

Single FETs, MOSFETs Applications

• High efficiency synchronous rectification in switch-mode power supplies
• Uninterruptible power supply systems
• High speed power switching circuits
• Hard switched and high frequency applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the package type matches your design requirements. Confirm that the component meets RoHS standards if required by your manufacturing process. Check the official datasheet for the most current qualification standards and industrial market suitability information before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust switching capabilities within a 100V voltage range. Ensure thermal management strategies account for the junction-to-case thermal resistance of 0.61°C/W. Verify that the gate drive circuitry can provide the necessary voltage levels to achieve the specified low on-resistance values during operation.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology and is designed specifically for industrial market applications. The device is available in multiple package options, including TO-220AB and TO-262, alongside the D2PAK variant covered here.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's cross-reference tools or application notes to identify equivalent parts. Verify that any substitute component maintains compatible pinout configurations, thermal resistance ratings, and electrical specifications suitable for the original circuit design.